Naslov
Point defect distribution in high-mobility conductive SrTiO3 crystals

Autori
Gentils, Aurelie ; Copie, Olivier ; Herranz, Gervasi ; Fortuna, Franck ; Bibes, Manuel ; Bouzehouane, Karim ; Jacquet, Eric ; Carretero, Cecile ; Basletić, Mario ; Tafra, Emil ; Hamzić, Amir ; Barthelemy, Agnes

Izvornik
Physical Review B - Condensed Matter and Materials Physics (1098-0121) 81 (2010), 14; 144109-1

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Positron annihilation; Point defects; Defect clusters; Ion radiation effects

Sažetak
We have carried out positron annihilation spectroscopy to characterize the spatial distribution and the nature of vacancy defects in insulating as-received as well as in reduced SrTiO3 substrates exhibiting high-mobility conduction. The substrates were reduced either by ion etching the substrate surfaces or by doping with vacancies during thin film deposition at low pressure and high temperature. We show that Ti-vacancies are native defects homogeneously distributed in as-received substrates. In contrast, the dominant vacancy defects are the same both in ion-etched and substrates reduced during the film growth, and they consist of non-homogeneous distributions of cation-oxygen vacancy complexes. Their spatial extension is tuned from a few microns in ion-etched samples to the whole substrate in specimens reduced during film deposition. Our results shed light on the transport mechanisms of conductive SrTiO3 crystals and on strategies for defect-engineered oxide quantum wells, wires and dots.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

POVEZANOST RADA