Naslov
Observed similar behaviour of a-Si:H p-i-n photodiode and retina response

Autori
Gradišnik, Vera

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceeding of the Seventh IASTED International Conference on Biomedical Engineering / Hierlemann, Andreas - Innsbruck : International Association of Science and Technology for Development (IASTED), 2010, 176-180

ISBN
978-0-88986-826-7

Skup
7th IASTED International Conference on Biomedical Engineering (BioMed 2010)

Mjesto i datum
Innsbruck, Austrija, 17.02.2010. - 19.02.2010

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
a-Si:H; defects; photodiode; ERG; retina

Sažetak
Epiretinal and subretinal prosthesis implants, composed mostly of silicon CMOS neuromorphic chips have recently been proposed. In this paper, we present measurements that detail the similarities between some mammillae retinal responses, monitored by electroretinography (ERG) and those of a-Si:H p-i-n photodiode (PD) response. The PD response on simultaneous voltage and light pulses has a similar shape as retinal layers response. The characteristic shape of PD response, ascribed here to trap states, is analyzed. The optimal parameters (amplitude, duration, waveform and frequency) and threshold voltages of the a-Si:H p- i-n photodiode responses were identified. The voltage pulse influence on photodiode response can be compared with activities of bipolar cells in retinal response. Previously described PD behaviour suggests potential use of a-Si:H p-i-n PD as active pixel in retinal implant.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

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