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Pregled bibliografske jedinice broj: 441268

Analysis of Subthreshold Conduction in Short-Channel Recessed Source/Drain UTB SOI MOSFETs

Sviličić, Boris; Jovanović, Vladimir; Suligoj, Tomislav
Analysis of Subthreshold Conduction in Short-Channel Recessed Source/Drain UTB SOI MOSFETs // Solid-state electronics, 54 (2010), 5; 545-551 doi::10.1016/j.sse.2010.01.009 (međunarodna recenzija, članak, znanstveni)

CROSBI ID: 441268 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Analysis of Subthreshold Conduction in Short-Channel Recessed Source/Drain UTB SOI MOSFETs

Autori
Sviličić, Boris ; Jovanović, Vladimir ; Suligoj, Tomislav

Izvornik
Solid-state electronics (0038-1101) 54 (2010), 5; 545-551

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
silicon-on-insulator; recessed source/drain SOI; two-dimensional (2-D) Poisson's equation; subthreshold slope; short-channel effects

Sažetak
The subthreshold conduction regime in short-channel recessed source/drain (ReS/D) ultra-thin body (UTB) silicon-on-insulator (SOI) MOSFETs is studied. A physics-based model for the subthreshold slope of ReS/D UTB SOI MOSFETs is developed, based on an analytical solution of 2-D Poisson's equation for the front-gate and back-gate potential distributions. In order to verify the accuracy of the model, the calculated subthreshold slope values are compared with the results obtained by Medici 2-D numerical device simulator over a wide range of different device structures, and very good agreement is obtained down to channel lengths of sub-30 nm. The model is given in explicit form without any fitting parameters and requires no iterative calculation, thus making it ideally suitable for fast prediction and evaluation of device design criteria for optimal scaling of the ReS/D UTB SOI MOSFETs.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA

Projekti:
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Suligoj, Tomislav, MZO ) ( CroRIS)
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Koričić, Marko, MZO ) ( CroRIS)

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Tomislav Suligoj (autor)

Avatar Url Boris Sviličić (autor)

Avatar Url Vladimir Jovanović (autor)

Poveznice na cjeloviti tekst rada:

doi

Citiraj ovu publikaciju:

Sviličić, Boris; Jovanović, Vladimir; Suligoj, Tomislav
Analysis of Subthreshold Conduction in Short-Channel Recessed Source/Drain UTB SOI MOSFETs // Solid-state electronics, 54 (2010), 5; 545-551 doi::10.1016/j.sse.2010.01.009 (međunarodna recenzija, članak, znanstveni)
Sviličić, B., Jovanović, V. & Suligoj, T. (2010) Analysis of Subthreshold Conduction in Short-Channel Recessed Source/Drain UTB SOI MOSFETs. Solid-state electronics, 54 (5), 545-551 doi::10.1016/j.sse.2010.01.009.
@article{article, author = {Svili\v{c}i\'{c}, Boris and Jovanovi\'{c}, Vladimir and Suligoj, Tomislav}, year = {2010}, pages = {545-551}, DOI = {doi:10.1016/j.sse.2010.01.009}, keywords = {silicon-on-insulator, recessed source/drain SOI, two-dimensional (2-D) Poisson's equation, subthreshold slope, short-channel effects}, journal = {Solid-state electronics}, doi = {doi:10.1016/j.sse.2010.01.009}, volume = {54}, number = {5}, issn = {0038-1101}, title = {Analysis of Subthreshold Conduction in Short-Channel Recessed Source/Drain UTB SOI MOSFETs}, keyword = {silicon-on-insulator, recessed source/drain SOI, two-dimensional (2-D) Poisson's equation, subthreshold slope, short-channel effects} }
@article{article, author = {Svili\v{c}i\'{c}, Boris and Jovanovi\'{c}, Vladimir and Suligoj, Tomislav}, year = {2010}, pages = {545-551}, DOI = {doi:10.1016/j.sse.2010.01.009}, keywords = {silicon-on-insulator, recessed source/drain SOI, two-dimensional (2-D) Poisson's equation, subthreshold slope, short-channel effects}, journal = {Solid-state electronics}, doi = {doi:10.1016/j.sse.2010.01.009}, volume = {54}, number = {5}, issn = {0038-1101}, title = {Analysis of Subthreshold Conduction in Short-Channel Recessed Source/Drain UTB SOI MOSFETs}, keyword = {silicon-on-insulator, recessed source/drain SOI, two-dimensional (2-D) Poisson's equation, subthreshold slope, short-channel effects} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus

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