Pregled bibliografske jedinice broj: 439679
Optimum Body Thickness of (111)-oriented Ultra-Thin Body Double-Gate MOSFETs with Respect to Quantum-Calculated Phonon-Limited Mobility
Optimum Body Thickness of (111)-oriented Ultra-Thin Body Double-Gate MOSFETs with Respect to Quantum-Calculated Phonon-Limited Mobility // Proceedings of the International Semiconductor Device Research Symposium 2009 / Jones, Ken ; Dilli, Zeynep (ur.).
College Park (MD): Institute of Electrical and Electronics Engineers (IEEE), 2009. str. 1-2 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 439679 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Optimum Body Thickness of (111)-oriented Ultra-Thin Body Double-Gate MOSFETs with Respect to Quantum-Calculated Phonon-Limited Mobility
Autori
Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of the International Semiconductor Device Research Symposium 2009
/ Jones, Ken ; Dilli, Zeynep - College Park (MD) : Institute of Electrical and Electronics Engineers (IEEE), 2009, 1-2
ISBN
978-1-4244-6031-1
Skup
International Semiconductor Device Research Symposium 2009
Mjesto i datum
College Park (MD), Sjedinjene Američke Države, 09.12.2009. - 11.12.2009
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
quantum modeling; phonon scattering; mobility; ultra-thin body; double-gate MOSFET
Sažetak
For the first time, mobility enhancement due to quantum confinement effects is reported in (111)-oriented UTB DG MOSFETs with TSi between 6 and 8 nm for Eeff of 1 and 0.3 MV/cm, respectively. When compared to (100)- and (110)-oriented UTB DG devices, (111)-devices reach maximum mobility at higher TSi which benefits the fabrication and makes them less susceptible to δTSi-induced scattering. The results presented here encourage the utilization of UTB FinFETs on (110)-substrate with (111)-oriented vertical sides.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Projekti:
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Suligoj, Tomislav, MZO ) ( CroRIS)
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Koričić, Marko, MZO ) ( CroRIS)
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb
