Naslov
An Accurate and Efficient Surface Scattering Model for Monte Carlo Device Simulation

Autori
Grgec, Dalibor ; Jungemann, Chistoph ; Nguyen, Chi-Dong ; Neinhüs, Burkhard ; Meinerzhagen, Bernd

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of 7th International Conference on Solid-State and Integrated Circuits Technology / - Peking, 2004, 991-994

Skup
7th International Conference on Solid-State and Integrated Circuits Technology

Mjesto i datum
Peking, Kina, 18.10.2004. - 21.10.2004

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
Monte Carlo; Device Simulation; Surface Scattering

Sažetak
A new efficient model for electron surface scattering in Si/SiO2 MOS structures for Monte Carlo device simulation compatible with quantum correction of the carrier density is presented. The model is based on simplified physics based equations for nonlocal surface roughness scattering and surface phonons scattering rates. Some model parameters are adjusted and a few additional terms are introduced to match the relevant measurements. The simulation model reproduces the measured low-field effective mobility vs. effective field curves with excellent accuracy including the temperature dependence. Device simulations of a MOS transistor with the new surface scattering model and additional effects (contact resistances and self-heating) were performed. The results were compared to the measurements and simulation results from a classical device simulator (drift-diffusion and hydrodynamic model) with an equivalent quantum correction and similar surface mobility model.

Izvorni jezik
Engleski

Znanstvena područja
Fizika, Elektrotehnika

POVEZANOST RADA