Pregled bibliografske jedinice broj: 435767
Band-to-band Tunneling Related Effects in a Thin MOS Structure
Band-to-band Tunneling Related Effects in a Thin MOS Structure // Microelectronic Engineering, 72 (2004), 1-4; 180-184 (međunarodna recenzija, članak, znanstveni)
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Naslov
Band-to-band Tunneling Related Effects in a Thin MOS Structure
Autori
Vexler, M. I. ; Shulekin, A. F. ; Grgec, Dalibor ; Grekhov, I. V. ; Meinerzhagen, B.
Izvornik
Microelectronic Engineering (0167-9317) 72
(2004), 1-4;
180-184
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
tunneling; band-to-band; MOS; inversion layer; C-V curves; I-V curves
Sažetak
The effect of band-to-band tunneling (BBT) on the behaviour of MOS structures doped to 10^18-10^19 cm−3 with an 2-3 nm oxide is studied theoretically. The BBT is shown to supply the minority carriers toward the Si/SiO2 interface. This effect can support the inversion layer in the non-equilibrium and modify the I-V and C-V curves. The experimental data on MOS diodes, supporting the theory, are also presented.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
POVEZANOST RADA
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb,
Tehničko veleučilište u Zagrebu
Profili:
Dalibor Grgec
(autor)
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
