Naslov
Laser Annealing of Self-Aligned As+ Implants in Contact Windows for Ultrashallow Junction Formation

Autori
Biasotto, Cleber ; Gonda, Viktor ; Nanver, Lis K. ; van der Cingel, Johan ; Jovanović, Vladimir

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Electrochemical Society Transactions / De Lima Monteiro, D. ; Bonnaud, O. ; Morimoto, N. - : The Electrochemical Society (ECS), 2009, 19-27

ISBN
978-1-56677-737-7

Skup
24th Symposium on Microelectronics Technology and Devices

Mjesto i datum
Natal, Brazil, 31.08.2009. - 03.09.2009

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
ultrashallow junctions; excimer laser annealing; amorphous silicon recrystallization

Sažetak
In the past it has been shown that ultrashallow junctions with minimum lateral dimensions can be made by implanting self-aligned to the contact window and using one-shot excimer laser annealing (ELA) to activate the dopants. Besides the recrystallization of the implanted Si, the final structuring at the contact window perimeter is very important for the ideality of the diode. In this paper this process is has been investigated for 5 keV As+ implanted in windows etched in a thermal/LPCVD oxide layer stack. The window perimeter processing is very critical but tilted implants can be used to increase the junction overlap with the window and good diode characteristics are obtained. The junction depths have been analyzed by secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM). A junction of only 15 nm deep with a sheet resistance of 311 ohm/square was obtained for an implantation tilt angle of 45o and laser energy density of 1000 mJ/cm2, whereas the junction depth of 20 nm and sheet resistance of 220 ohm/square was obtained for the tilt of 7o.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

POVEZANOST RADA