Naslov
Possibilities of electron beam recryszallization of thin films of hydrogenated amorphous silicon a-Si:H

Autori
Vlahović, Branislav ; Mikšik, Y. ; Peršin, Mirjana ; Sinovčević, Renata ; Borjanović, Vesna

Izvornik
Vacuum (0042-207X) 40 (1990), 1-2; 237-238

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, ostalo, znanstveni

Ključne riječi
electron beam ; recrystallization ; hydrogenated amorphous silicon

Sažetak
This paper describes the formation of thin films of polycrystalline silicon (thickness between approximately 0.3 and 1.5 um) by means of so called plasma enhanced chemical vapour deposition (PECVD), followed by electron beam recrystallization. Plasma enhanced chemical vapour deposition of a-Si layers was performed in rf (13.56 MHz) planar plasma reactor which uses a gas mixture of 5% silane (SiH4) in argon and plane parallel electrodes. The authors varied the conditions of PECVD (rf, power, spacing between electrodes, gas mixture flow rates, substrate temperatures) as well as the parameters of electron beam irradiation (the frequency and duration of electron pulses, energy of electrons etc) in order to obtain polycrystalline Si layers with electrical and optical properties suitable for solar cell application.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

Napomena
Abstract

POVEZANOST RADA