Pregled bibliografske jedinice broj: 422892
DLTS studies of thermally treated carbon-rich silicon
DLTS studies of thermally treated carbon-rich silicon // Materials science forum, 143-147 (1994), 153-158 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 422892 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
DLTS studies of thermally treated carbon-rich silicon
Autori
Urli, Natko ; Borjanović, Vesna
Izvornik
Materials science forum (0255-5476) 143-147
(1994);
153-158
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
siliciji ; ugljik i kisik nečistoće ; dislokacije
(silicon ; carbon and oxygen impurities ; dislocations)
Sažetak
Deep level transient spectroscopy (DLTS) has been employed in order to study a variety of deep trap states in the EFG silicon ribons, grown in the atmosphere of CO2 or without it and heated at 1250 C up to 6 hours. After heating a large decrease in the substitutional carbon concentration accompanied with a slight increase in the interstitial oxygen concentration has been detected, indicating tha carbon atoms take a predominant role in the precipitatiopn processes anf formation of various defect complexes in these samples. A possible identification of defects associated with various energy levels observed in differently prepared samples is discussed in view of impurity-dislocation interaction and carbon pairing
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb,
Institut "Ruđer Bošković", Zagreb
Citiraj ovu publikaciju:
Uključenost u ostale bibliografske baze podataka::
- SCOPUS, Cambridge Scientific Abstracts (CSA), Chemical Abstracts (CA), ISI (ISTP, CPCI, )
