Naslov
Susceptibility of PMOS Transistors under High RF Excitations at Source Pin

Autori
Jović, Ognjen ; Stuermer, Uwe ; Wilkening, Wolfgang ; Baric, Adrijan ; Maier, Christian

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proc. 20th Int. Zurich Symp. Electromagnetic Compatibility 2009 / Vahldieck, Ruediger - Zürich : ETH Zurich, 2009, 401-404

ISBN
978-3-9523286-6-8

Skup
EMC Zurich 2009 - 20th International Zurich Symposium on Electromagnetic Compatibility

Mjesto i datum
Zürich, Švicarska, 12.01.2009. - 16.01.2009

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
EMC; susceptibility; high RF excitations

Sažetak
This work analyses the operation point shift of PMOS transistors at high electromagnetic interference levels. These devices are typically connected to supply rails of integrated circuits. In this configuration their source connections are subjected to RF disturbances. We provide measurement and simulation results of such interferences and their effects. The results reveal a complex behaviour at low frequencies when the power level is varied. This behaviour is caused by both nonlinear characteristics of the intrinsic PMOS transistor and the turn-on of the parasitic drain-bulk diode at higher power levels. It is relevant up to RF frequencies of several hundred MHz.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

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