Naslov
Mobile carriers generated by Ar+ ion-etching of SrTiO_3 single crystals

Autori
Copie, Olivier ; Gentils, Aurelie ; Tafra, Emil ; Herranz, Gervasi ; Basletić, Mario ; Carretero, Cécile ; Bouzehouane, Karim ; Fusil, S. ; Bibes, Manuel ; Deranlot, Cyrile ; Fortuna, F. ; Hamzić, Amir ; Barthélémy, Agnes

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni

Izvornik
E-MRS Spring Meeting - Synthesis, Processing and Characterization of Nanoscale Multi Functional Oxide Films / - Strasbourg, 2009

Skup
E-MRS Spring Meeting - Synthesis, Processing and Characterization of Nanoscale Multi Functional Oxide Films

Mjesto i datum
Strasbourg, Francuska, 08.06.2009. - 12.06.2009

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
spintronics; STO heterostructures; high mobility electron gas; ion etching

Sažetak
The future developments of new spintronic devices require high mobility 2DEG to inject and manipulate spins. Recently, such high mobility electron gas has been reported in the LaAlO_3/SrTiO_3 system and attributed to charge transfer at the polar interface. Such oxide based 2DEG is promising since it could be combined with other oxide materials taking advantage of their attractive versatility and multifunctional character. In this charge transfer mechanism the carrier concentration is very high, about 10^21 cm^(-3) and presents a moderate mobility compared to doped SrTiO3 single crystal. An alternative way to obtain high mobility electron gas while controlling the carrier concentration and its extension is by ion etching. We will present analysis of the distribution of defects and mobile carriers generated by means of preferential ion-beam etching of SrTiO_3 single crystals by combining positron annihilation spectroscopy (PAS), conductive-tip atomic force microscopy (CT-AFM) and low temperature magnetotransport. We demonstrate that vacancies generated at the surface by room-temperature ion irradiation diffuse on the micron scale and that consequently, carriers are distributed on the same scale.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

POVEZANOST RADA