Pregled bibliografske jedinice broj: 403651
Characterisation of nitrogen-related defects in compound semiconductors by near- edge x-ray absorption fine structure
Characterisation of nitrogen-related defects in compound semiconductors by near- edge x-ray absorption fine structure // 11th Joint Vacuum Conference (JVC-11), 2006.
Prag, Češka Republika, 2006. (plenarno, međunarodna recenzija, sažetak, znanstveni)
CROSBI ID: 403651 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Characterisation of nitrogen-related defects in compound semiconductors by near- edge x-ray absorption fine structure
Autori
Petravić, Mladen
Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni
Skup
11th Joint Vacuum Conference (JVC-11), 2006.
Mjesto i datum
Prag, Češka Republika, 24.09.2006. - 26.09.2006
Vrsta sudjelovanja
Plenarno
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
NEXAFS; semiconductors; defects
Sažetak
We have used synchrotron-based near-edge x-ray absorption fine structure (NEXAFS) spectroscopy to study the electronic structure of nitrogen-related defects in several compound semiconductors, such as GaN, InN, GaSb and InSb. Several defect levels within the band gap or the conduction band were clearly resolved in NEXAFS spectra around the nitrogen K-edge. We attribute these levels to interstitial or antisite nitrogen. A sharp resonance above the conduction band minimum observed from all samples under consideration was attributed to molecular nitrogen, in full agreement with the vibrational fine structure of the N 1s→ 1π * resonance in N2.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Projekti:
316-0982886-0542 - Istraživanje dušikovih defekata u složenim poluvodičkim spojevima (Petravić, Mladen, MZOS ) ( CroRIS)
Ustanove:
Sveučilište u Rijeci - Odjel za fiziku
Profili:
Mladen Petravić
(autor)
