Naslov
Horizontal Current Bipolar Transistor Structures for Integration with CMOS Technology

Autori
Koričić, Marko

Vrsta, podvrsta i kategorija rada
Ocjenski radovi, doktorska disertacija

Fakultet
Fakultet elektrotehnike i računarstva

Mjesto
Zagreb

Datum
03.07

Godina
2008

Stranica
159

Mentor
Suligoj, Tomislav

Ključne riječi
BiCMOS; RF; HCBT; lateral transistors; charge sharing; breakdown voltage; cutoff frequency

Sažetak
Integration of HCBT structure into 0.18 &#956; m CMOS process using the base after gate integration scheme is presented. Process is modified compared to previous HCBT technology. Standard bulk CMOS wafers with <100> orientation are used as a substrate for transistor fabrication. CMOS shallow trench isolation (STI) is used for definition of active area of the device as well as for device isolation. Transistors are made on the sidewalls defined by the STI which are exposed by masked oxide etching. Intrinsic transistor is processed on the exposed sidewall obtaining the emitter to base self-alignment. Since <100> wafers are used for the transistor fabrication crystallographic dependant etching cannot be employed for emitter polysilicon etching. Property of TMAH selectivity to native oxide is used for protection of the active transistor area at the polysilicon etching step. Transistor height is scaled approximately six times compared to previous HCBT technology. Transistors with 350 nm height and state of the art performance are successfully processed. Two novel HCBT devices are presented for the first time. Presented single polysilicon region HCBT has fT and fmax as high as 51.8 and 63.6 GHz respectively and fTBVCEO product of 155.4 GHzV. Double emitter structure uses the three dimensional charge sharing effect for improvement of breakdown voltages. Presented double emitter HCBT has common emitter breakdown voltage (BVCEO) of 15 V and Early voltage, (VA) of 141 V. All proposed HCBT structures can be fabricated in the same technological process which makes HCBT BiCMOS technology flexible and low cost BiCMOS platform for RF applications.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

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