Naslov
Power MOS Transistors Integrated in Standard CMOS Technology without any Increase in Process Complexity

Autori
Šarlija, Marko ; Vasiljević, Igor ; Suligoj, Tomislav

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of 32nd International Convention MIPRO 2009 / Biljanović, Petar ; Skala, Karolj - Zagreb : Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2009, 101-106

Skup
32nd International Convention MIPRO 2009

Mjesto i datum
Opatija, Hrvatska, 25.05.2009. - 29.05.2009

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
power MOS transistors; 0.35um technology; breakdown; numerical simulations

Sažetak
In this paper, we developed power MOS structures where the drift region is fabricated by using the process steps that already exist in CMOS baseline technology, such as, LDD and/or n-well region together with LOCOS isolation and p^+ implantation. Five different structures fabricated in a standard 0.35μ m CMOS technology are examined by measurements and simulations and the effect of various technology parameters on device characteristics are analyzed. The optimum power MOS structure has B_VDS=20V, R_ON=9.4kΩ μ m and I_ON=220μ A/μ m, which correspond to the changes of +203%, +213% and – 46%, respectively, comparing to standard nMOS transistor.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

POVEZANOST RADA