Naslov
Integration of Laser-Annealed Junctions in a Low- Temperature High-k Metal-Gate MISFET

Autori
Biasotto, Cleber ; Jovanović, Vladimir ; Gonda, Viktor ; van der Cingel, Johan ; Milosavljević, Silvana ; Nanver, Lis K.

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the 10th International Conference on ULtimate Integration of Silicon / Mantl, S. ; Lemme, M. ; Schubert, J. ; Albrecht, W. - , 2009, 181-184

ISBN
978-1-4244-3705-4

Skup
10th International Conference on ULtimate Integration of Silicon

Mjesto i datum
Aachen, Njemačka, 18.03.2009. - 20.03.2009

Vrsta sudjelovanja
Poster

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
MISFET; high-k; laser annealing

Sažetak
Integration and properties of devices processed by excimer laser annealing are presented. The best results are achieved by shallow implantations into a native-oxide-free silicon surface and laser annealing with the remainder of the device protected by an Al reflective layer. Low- temperature MISFETs are fabricated with a metal- gate high-k gate stack of PECVD SiO2 and ALD Al2O3 with an EOT of 9.2 nm and an Al-gate. The source/drain regions are self-aligned to the metal gate, which also serves as a laser masking reflective layer. Ablation of the masking layer is prevented due to the low thermal resistance of the thin underlying gate dielectric. The measured devices exhibit good current drivability, which improves with higher laser energy. The maximum processing temperature of the presented MISFETs is 400 C and can potentially to be reduced down to 300 C.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

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