Pregled bibliografske jedinice broj: 39947
Electron paramagnetic resonance study of defects in rapid thermal chemical vapor deposition polycrystalline silicon
Electron paramagnetic resonance study of defects in rapid thermal chemical vapor deposition polycrystalline silicon // Materials science and engineering B : solid state materials for advanced technology, 69 (2000), Special issue; 549-552 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 39947 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Electron paramagnetic resonance study of defects in rapid thermal chemical vapor deposition polycrystalline silicon
Autori
Grozdanić, Daniela ; Rakvin, Boris ; Pivac, Branko ; Slaoui, A. ; Monna, R.
Izvornik
Materials science and engineering B : solid state materials for advanced technology (0921-5107) 69
(2000), Special issue;
549-552
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
silicon; defects; electron paramagnetic resonance
Sažetak
Intrinsic polycrystalline silicon, grown by rapid thermal chemical vapor deposition, is characterized with electron paramagnetic resonance(EPR). It is shown that the obtained EPR signal consists of two components. One symmetrical signal due to dangling bonds at grain boundaries is typically found in polycrystalline material. Another asymmetrical signal is attributed to the multivacancy or multivacancy-oxygen complex formed at the grain boundaries. It is also shown that the contribution of the asymmetric component gradually decreases as the deposition temperature increases, meaning growth of a film with fewer defects at the grain boundaries.
Izvorni jezik
Engleski
Znanstvena područja
Kemija
POVEZANOST RADA
Ustanove:
Institut "Ruđer Bošković", Zagreb
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
