Pregled bibliografske jedinice broj: 39933
Thermionic Emission Process in Carrier Transport in pn Homojunctions
Thermionic Emission Process in Carrier Transport in pn Homojunctions // Proceedings of MELECON 2000, Vol. I / Economides, Costas ; Pattichis, Constantinos S. ; Maliotis, Greg (ur.).
Limassol: Institute of Electrical and Electronics Engineers (IEEE), 2000. str. 248-251 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
CROSBI ID: 39933 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Thermionic Emission Process in Carrier Transport in pn Homojunctions
Autori
Biljanović, Petar ; Suligoj, Tomislav
Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni
Izvornik
Proceedings of MELECON 2000, Vol. I
/ Economides, Costas ; Pattichis, Constantinos S. ; Maliotis, Greg - Limassol : Institute of Electrical and Electronics Engineers (IEEE), 2000, 248-251
Skup
MELECON 2000, 10th Mediterranean Electrotechnical Conference
Mjesto i datum
Limassol, Cipar, 29.05.2000. - 31.05.2000
Vrsta sudjelovanja
Predavanje
Vrsta recenzije
Međunarodna recenzija
Ključne riječi
thermionic emission; Maxwell-Boltzmann distribution function; quasi-neutral region; doping profile
Sažetak
Thermionic emission is treated in pn homojunctions. Thermionic current over pn junction barrier is derived directly from Maxwell-Boltzmann distribution function as a difference between the majority carrier flow and the flow of excess carriers in the opposite direction. It is shown that the excess carrier concentration is determined as an equilibrium between thermionic and diffusion process, which depends on quasi-neutral regions. Such an approach enables the determination of boundary condition for any doping profile.
Izvorni jezik
Engleski
Znanstvena područja
Elektrotehnika
