Naslov
Influence of Shallow Impurity on Steady-State Probability Function of Multilevel Deep Impurity

Autori
Divković-Pukšec, Julijana ; Gradišnik, Vera

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of MELECON 2000, Vol. I / Economides, Costas ; Pattichis, Constantinos S. ; Maliotis, Greg - Limassol : Institute of Electrical and Electronics Engineers (IEEE), 2000, 185-188

Skup
MELECON 2000, 10th Mediterranean Electrotechnical Conference

Mjesto i datum
Cipar, 29.05.2000. - 31.05.2000

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
multilevel deep impurity; entropy factor; deep energy level; probability function

Sažetak
The deep impurity add into the n- or p-type of a semiconductor is partially ionised. The probability function used to describe the occupation of a deep energy level, is the Fermi-Dirac function into which the entropy factor is introduced; *_p for donor level or *_n for acceptor level. The entropy factors are used to adjust the calculated and measured values. An effective deep energy level was defined, depending on the predicted position of a deep level and on obtained entropy factor. Comparing the calculated and measured values for gold and platinum added into the n- and p- type of silicon, we can see that the same predicted energy level is described with the quite different entropy factor in the n- and p- type of a semiconductor. According to the obtained positions of the effective deep energy levels, it can be concluded that in the compensation between shallow and deep impurity a deep level, which is nearest to the shallow level, must be considered. The other levels are neutral. It might happen that in the n-type of semiconductor the higher acceptor level of platinum is occupied, while the lower one is empty. It seems that such a neutral energy level does not exist in the n-type, while in the p-type it does, and it is partially occupied. *=hi

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

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