Naslov
Multilevel Deep Impurity in N and P-type of Semiconductor

Autori
Divković-Pukšec, Julijana

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of MIPRO 2000 / Biljanović, Petar ; Skala, Karolj ; Ribarić, Slobodan ; Budin, Leo - Rijeka : Hrvatska udruga za informacijsku i komunikacijsku tehnologiju, elektroniku i mikroelektroniku - MIPRO, 2000, 1-4

Skup
MIPRO 2000, 23rd International Convention

Mjesto i datum
Opatija, Hrvatska, 22.05.2000. - 26.05.2000

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
multilevel deep impurity; deep energy levels; recombination centre; carrier lifetime; resistivity

Sažetak
A multilevel deep impurity has influence on to the semiconductors electrical characteristics. If we wont to predict or explain the behaviour of a deep impurity the position of its deep energy levels must be known. In this paper, on the base of the experimantally obtained data, it is point out that the different deep levels of the same impurity must be considered in the n- and p- type semiconductors. The main influence will have this level which is closest to the shallow impurity level. In the p- type it will be the lowest level, while in the n- type the highest. The other levels will be unionised. For having an electron or not, it is not so important the position of a deep level; more important is its possibility to change the initial state.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

POVEZANOST RADA