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Pregled bibliografske jedinice broj: 39874

Mesh Structure Adjustment in 2D Simulation of VLSI Super Self-Aligned Si Bipolar Transistor

Suligoj, Tomislav; Biljanović, Petar
Mesh Structure Adjustment in 2D Simulation of VLSI Super Self-Aligned Si Bipolar Transistor // 1999 IEEE Africon
Cape Town, Južnoafrička Republika, 1999. str. 1167-1172 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)

CROSBI ID: 39874 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Mesh Structure Adjustment in 2D Simulation of VLSI Super Self-Aligned Si Bipolar Transistor

Autori
Suligoj, Tomislav ; Biljanović, Petar

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
1999 IEEE Africon / - , 1999, 1167-1172

Skup
1999 IEEE Africon, 5Čth Africon Conference in Africa

Mjesto i datum
Cape Town, Južnoafrička Republika, 28.09.1999. - 01.10.1999

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
fabrication process; super self-aligned silicon bipolar transistor; 2D simulation program; simulation mesh

Sažetak
A fabrication process of high-speed, deep-trench, double polysilicon super self-aligned silicon bipolar transistor is simulated by 2D simulation program, assuming 0,25 *m design rules. The effect of simulation mesh on doping profiles of intrinsic and extrinsic transistor, deposited layers and electrical characteristics simulation model are analyzed.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA

Projekti:
036001

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Petar Biljanović (autor)

Citiraj ovu publikaciju:

Suligoj, Tomislav; Biljanović, Petar
Mesh Structure Adjustment in 2D Simulation of VLSI Super Self-Aligned Si Bipolar Transistor // 1999 IEEE Africon
Cape Town, Južnoafrička Republika, 1999. str. 1167-1172 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Suligoj, T. & Biljanović, P. (1999) Mesh Structure Adjustment in 2D Simulation of VLSI Super Self-Aligned Si Bipolar Transistor. U: 1999 IEEE Africon.
@article{article, author = {Suligoj, Tomislav and Biljanovi\'{c}, Petar}, year = {1999}, pages = {1167-1172}, keywords = {fabrication process, super self-aligned silicon bipolar transistor, 2D simulation program, simulation mesh}, title = {Mesh Structure Adjustment in 2D Simulation of VLSI Super Self-Aligned Si Bipolar Transistor}, keyword = {fabrication process, super self-aligned silicon bipolar transistor, 2D simulation program, simulation mesh}, publisherplace = {Cape Town, Ju\v{z}noafri\v{c}ka Republika} }
@article{article, author = {Suligoj, Tomislav and Biljanovi\'{c}, Petar}, year = {1999}, pages = {1167-1172}, keywords = {fabrication process, super self-aligned silicon bipolar transistor, 2D simulation program, simulation mesh}, title = {Mesh Structure Adjustment in 2D Simulation of VLSI Super Self-Aligned Si Bipolar Transistor}, keyword = {fabrication process, super self-aligned silicon bipolar transistor, 2D simulation program, simulation mesh}, publisherplace = {Cape Town, Ju\v{z}noafri\v{c}ka Republika} }

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