Naslov
Intrinsic point defects in polycrystalline silicon

Autori
Pivac, Branko ; Borjanović, Vesna ; Kovačević, Ivana

Izvornik
Fizika A (1330-0008) 9 (2000), 1; 37-46

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
polycrystalline silicon ; intrinsic point defects ; interaction with other impurities ; electronic properties

Sažetak
The behavior of intrinsic point defects in silicon is still an unresolved problem. As they interact with other impurities and influnece their diffusion intrinsic point defects therefore, affect electronic properties of material. Of particular importance is intrinsic point defect behavior in polycrystalline silicon due to the presence of very high concentration of structural defects, such as dislocations and grain boundaries of various kinds. A direct observation of point defects is very difficult and therefore it is shown that monitoring of carbon concentration is a very good measure of present point defects behavior. Polycrystalline material supersaturated with carbon presents a particular case when self-interstitials and vacancies generation is significantly retarded up to the highest temperatures, leading therefore to preservation of carbon supersaturation upon thermal treatments.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

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