Naslov
Characterisation of molecular nitrogen in ion-bombarded compound semiconductors by synchrotron-based absorption and emission spectroscopies

Autori
Božanić, Ana ; Majlinger, Zlatko ; Petravić, Mladen ; Gao, Q. ; Llewellyn, D. ; Crotti, C. ; Yang Y.-W. ; Kim, K.-J. ; Kim, B.

Izvornik
Vacuum (0042-207X) 84 (2009), 1 Special Issue; 37-40

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
NEXAFS; XPS; molecular nitrogen

Sažetak
We have studied formation of molecular nitrogen under low- energy nitrogen bombardment in a range of compound semiconductors by synchrotron-based x-ray photoelectron spectroscopy (XPS) around N 1s core-level and near-edge X-ray absorption fine structure (NEXAFS) around N K-edge. We have found interstitial molecular nitrogen, N2, in all samples under consideration. The presence of N2 produces a sharp resonance in low-resolution NEXAFS spectra at around 400.8 eV, showing the characteristic vibrational fine structure in high-resolution measurements. At the same time, a new peak, shifted towards higher binding energies, emerges in all N 1s photoemission spectra. We have found a shift of 7.6 eV for In-based compounds and 6.7 eV for Ga-based compounds. Our results demonstrate that NEXAFS and core-level XPS are complementary techniques that form a powerful combination for studying molecular nitrogen in compound semiconductors, such as GaSb, InSb, GaAs, InN, GaN or ZnO.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

POVEZANOST RADA