Pretraga

Pretražite po imenu i prezimenu autora, mentora, urednika, prevoditelja

Napredna pretraga

Pregled bibliografske jedinice broj: 384041

Analytical Models of Front- and Back-Gate Potential Distribution and Threshold Voltage for Recessed Source/Drain UTB SOI MOSFETs

Sviličić, Boris; Jovanović, Vladimir; Suligoj, Tomislav
Analytical Models of Front- and Back-Gate Potential Distribution and Threshold Voltage for Recessed Source/Drain UTB SOI MOSFETs // Solid-state electronics, 53 (2009), 5; 540-547 doi:10.1016/j.sse.2009.03.002 (međunarodna recenzija, članak, znanstveni)

CROSBI ID: 384041 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Analytical Models of Front- and Back-Gate Potential Distribution and Threshold Voltage for Recessed Source/Drain UTB SOI MOSFETs

Autori
Sviličić, Boris ; Jovanović, Vladimir ; Suligoj, Tomislav

Izvornik
Solid-state electronics (0038-1101) 53 (2009), 5; 540-547

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
Silicon-on-insulator; Recessed Source/Drain SOI; two-dimensional (2-D) Poisson's equation; potential distribution; short-channel effects; threshold voltage

Sažetak
Front-gate and back-gate potential distributions and threshold voltage of recessed source/drain (ReS/D) ultra-thin body (UTB) silicon-on-insulator (SOI) MOSFETs are modeled. The analytical expressions of the front-gate and the back-gate potential distributions are derived by assuming a parabolic potential variation perpendicular to channel and by solving 2-D Poisson's equation. Based on strong inversion criterion applied to the surface potential minimum value, threshold voltage model of the short channel ReS/D UTB SOI MOSFETs is derived. The model is verified by comparison with 2-D numerical device simulator over a wide range of different material and geometrical parameters and very good agreement is obtained.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA

Projekti:
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Suligoj, Tomislav, MZO ) ( CroRIS)
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Koričić, Marko, MZO ) ( CroRIS)

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Boris Sviličić (autor)

Avatar Url Tomislav Suligoj (autor)

Avatar Url Vladimir Jovanović (autor)

Poveznice na cjeloviti tekst rada:

doi www.sciencedirect.com www.sciencedirect.com

Citiraj ovu publikaciju:

Sviličić, Boris; Jovanović, Vladimir; Suligoj, Tomislav
Analytical Models of Front- and Back-Gate Potential Distribution and Threshold Voltage for Recessed Source/Drain UTB SOI MOSFETs // Solid-state electronics, 53 (2009), 5; 540-547 doi:10.1016/j.sse.2009.03.002 (međunarodna recenzija, članak, znanstveni)
Sviličić, B., Jovanović, V. & Suligoj, T. (2009) Analytical Models of Front- and Back-Gate Potential Distribution and Threshold Voltage for Recessed Source/Drain UTB SOI MOSFETs. Solid-state electronics, 53 (5), 540-547 doi:10.1016/j.sse.2009.03.002.
@article{article, author = {Svili\v{c}i\'{c}, Boris and Jovanovi\'{c}, Vladimir and Suligoj, Tomislav}, year = {2009}, pages = {540-547}, DOI = {10.1016/j.sse.2009.03.002}, keywords = {Silicon-on-insulator, Recessed Source/Drain SOI, two-dimensional (2-D) Poisson's equation, potential distribution, short-channel effects, threshold voltage}, journal = {Solid-state electronics}, doi = {10.1016/j.sse.2009.03.002}, volume = {53}, number = {5}, issn = {0038-1101}, title = {Analytical Models of Front- and Back-Gate Potential Distribution and Threshold Voltage for Recessed Source/Drain UTB SOI MOSFETs}, keyword = {Silicon-on-insulator, Recessed Source/Drain SOI, two-dimensional (2-D) Poisson's equation, potential distribution, short-channel effects, threshold voltage} }
@article{article, author = {Svili\v{c}i\'{c}, Boris and Jovanovi\'{c}, Vladimir and Suligoj, Tomislav}, year = {2009}, pages = {540-547}, DOI = {10.1016/j.sse.2009.03.002}, keywords = {Silicon-on-insulator, Recessed Source/Drain SOI, two-dimensional (2-D) Poisson's equation, potential distribution, short-channel effects, threshold voltage}, journal = {Solid-state electronics}, doi = {10.1016/j.sse.2009.03.002}, volume = {53}, number = {5}, issn = {0038-1101}, title = {Analytical Models of Front- and Back-Gate Potential Distribution and Threshold Voltage for Recessed Source/Drain UTB SOI MOSFETs}, keyword = {Silicon-on-insulator, Recessed Source/Drain SOI, two-dimensional (2-D) Poisson's equation, potential distribution, short-channel effects, threshold voltage} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus

Citati:

    Altmetrijski pokazatelji:


    Podijeli:





    Contrast
    Increase Font
    Decrease Font
    Dyslexic Font
    CROSBI koristi kolačiće (cookies) kako bi poboljšao funkcionalnost stranice.