Naslov
Analytic model for organic memory-resistive devices

Autori
Tutiš, Eduard ; Houili, Hocine ; Batistić, Ivo

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni

Izvornik
Programs and Abstracts: ICEL7 - The 7th International Conference on Electroluminescence of Molecular Materials and Related Phenomena / Leo, Karl - Dresden : Technische Universitaet Dresen, 2008, 141-141

Skup
ICEL7 - The 7th International Conference on Electroluminescence of Molecular Materials and Related Phenomena

Mjesto i datum
Dresden, Njemačka, 02.09.2008. - 06.09.2008

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
metallic nanoparticles; charge storage; write-read-erase cycle

Sažetak
The essential ingredient of several types of organic bistable devices recently demonstrated is the inclusion of metallic nanoparticles in organic thin films. The switching time shows that the electronic process alone are responsible for the switching, while the comparison with devices where the nanoparticles are replaced by thin film show that the size of the particles are important for the occurrence of the bistability. It was also recently argued that the charging state of the nanoparticles determine the state of the device. In the simplest geometry (Wang et al, APL 2006), the layer of nanoparticles is positioned in the middle of the organic layer, which excludes direct tunneling of electrons from/to electrodes as the mechanism for the charging of nanoparticles. Here we present the model of the organic resistive memory device based on this particular geometry. The model is fully analytical, with model parameters that have clear microscopical interpretation. The model includes the hopping mobility of the carrier in disordered organic medium, hopping injection at electrodes (extensively studied in OLED structures), and the the charging/Coulomb effects at nanoparticles. The model is the first of the kind in our knowledge. Apart from obvious advantage to have the analytical model for the whole device, this is also essential for numerical device simulations, since, specific for the this kind of device, the physical time scales involved in write, erase and read processes are vastly different. We discuss the physical origin of these time scales, the importance of the asymmetry of the device and demonstrate the simulations of the device operation over write-store-read-erase cycles.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

POVEZANOST RADA