Pregled bibliografske jedinice broj: 38272
Infrared characterization of oxygen precipitates in silicon wafers with different concentration of interstitial oxygen
Infrared characterization of oxygen precipitates in silicon wafers with different concentration of interstitial oxygen // Materials science and engineering B : solid state materials for advanced technology, 73 (2000), 1-3; 145-148 (međunarodna recenzija, članak, znanstveni)
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Naslov
Infrared characterization of oxygen precipitates in silicon wafers with different concentration of interstitial oxygen
Autori
Borghesi, A. ; Sassella, A. ; Geranzani, P. ; Porrini, M. ; Pivac, B.
Izvornik
Materials science and engineering B : solid state materials for advanced technology (0921-5107) 73
(2000), 1-3;
145-148
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
silicon; interstitial oxygen; oxygen precipitation; infrared spectroscopy
Sažetak
The study of the optical behavior of oxygen in silicon is presented, based on infrared absorption measurements performed at liquid helium temperature.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
