Naslov
Improving bulk FinFET DC performance in comparison to SOI FinFET

Autori
Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav

Izvornik
Microelectronic engineering (0167-9317) 86 (2009), 10; 2078-2085

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
body-tied; corner effect; double-gate MOSFET; FinFET; silicon-on-insulator (SOI); short-channel-effect (SCE)

Sažetak
The implementation of FinFET structure in bulk silicon wafers is very attractive due to low-cost technology and compatibility with standard bulk CMOS in comparison with silicon-on-insulator (SOI) FinFET. SOI and bulk FinFET were analyzed by a three-dimensional numerical device simulator. We have shown that bulk FinFET with source/drain-to-body (S/D) junctions shallower than gate-bottom has equal or better subthreshold performance than SOI FinFET. By reducing S/D junction depth, fin width scaling for suppression of short-channel-effects (SCEs) can be relaxed. On-state performance has also been examined and drain current difference between the SOI and bulk FinFET at higher body doping levels has been explained by investigating enhanced conduction in silicon-oxide interface corners. By keeping the body doping low and junctions shallower than the gate bottom, bulk FinFET characteristics can be improved with no increase in process complexity and cost.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

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