Pregled bibliografske jedinice broj: 38040
GISAXS study of defects in He implanted silicon
GISAXS study of defects in He implanted silicon // Materials science and engineering B : solid state materials for advanced technology, 71 (2000), Special issue SI; 82-86 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 38040 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
GISAXS study of defects in He implanted silicon
Autori
Dubček, Pavo ; Milat, Ognjen ; Pivac, Branko ; Bernstorff, S. ; Amenitsch, H. ; Tonini, R. ; Corni, F. ; Ottaviani, G.
Izvornik
Materials science and engineering B : solid state materials for advanced technology (0921-5107) 71
(2000), Special issue SI;
82-86
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
defects; He implantation; small angle X-ray scattering
Sažetak
The modifications induced in single-crystal silicon by implanted helium have been investigated by grazing incidence small angle X-ray scattering technique. The samples prepared by implanting 2´1016 cm-2 helium ions at 20 keV in silicon wafers held at 77 K were thermally treated for 2 h in the 100-800°C temperature range. It is shown that implantation produced a film with slightly lower density than that of undamaged single crystal silicon. Further thermal treatment caused shrinking of the film leaving well ordered subsurface layer and damaged film below. Upon annealing at 600°C this structure apparently disappear, to be formed again upon annealing at 800°C.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Ustanove:
Institut za fiziku, Zagreb,
Institut "Ruđer Bošković", Zagreb
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
