Naslov
Oxygen-related deep levels in oxygen doped EFG poly-Si

Autori
Borjanović, Vesna ; Kovačević, Ivana ; Šantić, Branko ; Pivac, Branko

Izvornik
Materials science and engineering B : solid state materials for advanced technology (0921-5107) 71 (2000), SI; 292-296

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
defects ; polycrystalline silicon ; oxygen ; deep levels

Sažetak
We studied polycrystalline silicon grown in sheet form with oxidizing gas added to inert atmosphere. It is shown that oxygen aggregates at structural defects, preferably at grain boundaries and noncoherent twin bundles, and to lesser extent, also at dislocations within the grains. Oxygen agglomeration at structural defects increases their electrical activity. It is also shown that annealings even at very low temperatures enhance the oxygen aggregation at structural defects and consequently increase their electrical activity. However, annealing at 450°C causes dissolution of oxygen clusters modifying the electrical properties.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

POVEZANOST RADA