Pregled bibliografske jedinice broj: 38038
Carbon influence on gamma-irradiation induced defects in n-type CZ Si
Carbon influence on gamma-irradiation induced defects in n-type CZ Si // Materials science and engineering B : solid state materials for advanced technology, 71 (2000), SI; 92-95 doi:10.1134/S0020168507110015 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 38038 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Carbon influence on gamma-irradiation induced defects in n-type CZ Si
Autori
Vujičić, Miroslav ; Borjanović, Vesna ; Pivac, Branko
Izvornik
Materials science and engineering B : solid state materials for advanced technology (0921-5107) 71
(2000), SI;
92-95
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
silicon ; radiation defects ; deep levels
Sažetak
The study od irradiation effect of g rays for 60Co source on n-type carbon-free and carbon-rich Czochralski silicon single crystals is presented, based on deep level transient spectroscopy technique. It is shown that generation of vacancy-related defects is significantly enhanced in carbon-rich silicon in respect to carbon-free samples. Divacancy and multivacancy-related defects were particularly enhanced. The observed behavior is discussed and related to the carbon presence in the bulk. Carbon trapping of self-interstitials significantly enhanced vacancy concentration that further caused observed behavior.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Projekti:
00980301
Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb,
Institut "Ruđer Bošković", Zagreb
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
