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Pregled bibliografske jedinice broj: 375184

Comparison of current-voltage characteristics for hypothetic Si and SiC bipolar junction transistor

Matić, Tomislav; Švedek, Tomislav; Herceg, Marijan
Comparison of current-voltage characteristics for hypothetic Si and SiC bipolar junction transistor // Elektrotehniški vestnik, 75 (2008), 3; 97-104 (međunarodna recenzija, članak, znanstveni)

CROSBI ID: 375184 Za ispravke kontaktirajte CROSBI podršku putem web obrasca

Naslov
Comparison of current-voltage characteristics for hypothetic Si and SiC bipolar junction transistor

Autori
Matić, Tomislav ; Švedek, Tomislav ; Herceg, Marijan

Izvornik
Elektrotehniški vestnik (0013-5852) 75 (2008), 3; 97-104

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
silicon carbide; PN diode; BJT transistor; temperature characteristic; Ebers-Moll model

Sažetak
The paper presents a model developed for numerical simulation of temperature dependence of a hypothetical Si and SiC diode and BJT current-voltage characteristics. A classical Si PN wide-base diode model and an E-M BJT model are used with SiC semiconductor-specific parameters. Intrinsic carrier concentrations, carrier mobility temperature and doping concentration dependence are calculated for both semiconductors. The obtained current-voltage characteristics are compared and their temperature dependence is discussed. A hypothetic SiC PN diode has a much higher knee voltage and a wider extrinsic or operating temperature range, and the same applies to SiC BJT, which altogether makes SiC devices more appropriate for high-temperature and high-power applications.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika, Računarstvo



POVEZANOST RADA

Projekti:
165-0361630-3049 - Napredni sustavi radijskog pristupa zatvorenom prostoru i interakcija s okolišem (Švedek, Tomislav, MZO ) ( CroRIS)
165-0362027-1479 - Širokopojasni pristup i internetske usluge u ruralnim područjima (Žagar, Drago, MZO ) ( CroRIS)
165-0362980-2002 - Postupci raspoređivanja u samoodrživim raspodijeljenim računalnim sustavima (Martinović, Goran, MZO ) ( CroRIS)

Ustanove:
Fakultet elektrotehnike, računarstva i informacijskih tehnologija Osijek

Profili:

Avatar Url Tomislav Matić (autor)

Avatar Url Marijan Herceg (autor)

Avatar Url Tomislav Švedek (autor)

Citiraj ovu publikaciju:

Matić, Tomislav; Švedek, Tomislav; Herceg, Marijan
Comparison of current-voltage characteristics for hypothetic Si and SiC bipolar junction transistor // Elektrotehniški vestnik, 75 (2008), 3; 97-104 (međunarodna recenzija, članak, znanstveni)
Matić, T., Švedek, T. & Herceg, M. (2008) Comparison of current-voltage characteristics for hypothetic Si and SiC bipolar junction transistor. Elektrotehniški vestnik, 75 (3), 97-104.
@article{article, author = {Mati\'{c}, Tomislav and \v{S}vedek, Tomislav and Herceg, Marijan}, year = {2008}, pages = {97-104}, keywords = {silicon carbide, PN diode, BJT transistor, temperature characteristic, Ebers-Moll model}, journal = {Elektrotehni\v{s}ki vestnik}, volume = {75}, number = {3}, issn = {0013-5852}, title = {Comparison of current-voltage characteristics for hypothetic Si and SiC bipolar junction transistor}, keyword = {silicon carbide, PN diode, BJT transistor, temperature characteristic, Ebers-Moll model} }
@article{article, author = {Mati\'{c}, Tomislav and \v{S}vedek, Tomislav and Herceg, Marijan}, year = {2008}, pages = {97-104}, keywords = {silicon carbide, PN diode, BJT transistor, temperature characteristic, Ebers-Moll model}, journal = {Elektrotehni\v{s}ki vestnik}, volume = {75}, number = {3}, issn = {0013-5852}, title = {Comparison of current-voltage characteristics for hypothetic Si and SiC bipolar junction transistor}, keyword = {silicon carbide, PN diode, BJT transistor, temperature characteristic, Ebers-Moll model} }

Časopis indeksira:


  • Scopus

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