Pregled bibliografske jedinice broj: 37037
Role of contacts in characterization of deep traps in semi-insulating GaAs by thermally stimulated current spectroscopy
Role of contacts in characterization of deep traps in semi-insulating GaAs by thermally stimulated current spectroscopy // Journal of electronic materials, 28 (1999), 27-30 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 37037 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Role of contacts in characterization of deep traps in semi-insulating GaAs by thermally stimulated current spectroscopy
Autori
Fang, Z-Q. ; Look, D. C. ; Pavlović, Mladen ; Desnica, Uroš
Izvornik
Journal of electronic materials (0361-5235) 28
(1999);
27-30
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
contacts; deep traps; thermally stimulated current spectroscopy; TSC; semi-insulating GaAs
Sažetak
The role of contacts in characterization of traps in semi-insulating (SI) GaAs by thermally stimulated current (TSC) methods has been demonstrated by comparing alloyed In and soldered In contacts. Alloyed In contacts, which have an ohmic characteristic, assure high sensitivities in both TSC and temperature dependent photocurrent (PC), and both are important for determining the trap concentrations in SI GaAs. On the other hand, soldered In contacts, which act like Schottky barriers, cause a significant reduction of both PC and TSC, particularly at low temperatures, and can lead to a misinterpretation of TSC results.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus