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Pregled bibliografske jedinice broj: 369121

Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors

Li, Y.; Xiang, J.; Qian, F.; Gradečak, Silvija; Wu, Y.; Yan, H.; Blom, D. A.; Lieber, C. M.
Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors // Nano letters, 6 (2006), 7; 1468-1473 doi:10.1021/nl060849z (međunarodna recenzija, članak, znanstveni)

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Naslov
Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors

Autori
Li, Y. ; Xiang, J. ; Qian, F. ; Gradečak, Silvija ; Wu, Y. ; Yan, H. ; Blom, D. A. ; Lieber, C. M.

Izvornik
Nano letters (1530-6984) 6 (2006), 7; 1468-1473

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
radial; nanowire; heterostructures; high electron mobility transistors; GaN/AlN/AlGaN

Sažetak
We report the rational synthesis of dopant-free GaN/AlN/AlGaN radial nanowire heterostructures and their implementation as high electron mobility transistors (HEMTs). The radial nanowire heterostructures were prepared by sequential shell growth immediately following nanowire elongation using metal-organic chemical vapor deposition (MOCVD). Transmission electron microscopy (TEM) studies reveal that the GaN/AlN/AlGaN radial nanowire heterostructures are dislocation-free single crystals. In addition, the thicknesses and compositions of the individual AlN and AlGaN shells were unambiguously identified using cross-sectional high-angle annular darkfield scanning transmission electron microscopy (HAADF-STEM). Transport measurements carried out on GaN/AlN/AlGaN and GaN nanowires prepared using similar conditions demonstrate the existence of electron gas in the undoped GaN/AlN/AlGaN nanowire heterostructures and also yield an intrinsic electron mobility of 3100 cm2/Vs and 21 000 cm2/Vs at room temperature and 5 K, respectively, for the heterostructure. Field-effect transistors fabricated with ZrO2 dielectrics and metal top gates showed excellent gate coupling with near ideal subthreshold slopes of 68 mV/dec, an on/off current ratio of 107, and scaled on-current and transconductance values of 500 mA/mm and 420 mS/mm. The ability to control synthetically the electronic properties of nanowires using band structure design in III-nitride radial nanowire heterostructures opens up new opportunities for nanoelectronics and provides a new platform to study the physics of low-dimensional electron gases.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA

Ustanove:
Prirodoslovno-matematički fakultet, Zagreb

Profili:

Avatar Url Silvija Gradečak (autor)

Poveznice na cjeloviti tekst rada:

doi

Citiraj ovu publikaciju:

Li, Y.; Xiang, J.; Qian, F.; Gradečak, Silvija; Wu, Y.; Yan, H.; Blom, D. A.; Lieber, C. M.
Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors // Nano letters, 6 (2006), 7; 1468-1473 doi:10.1021/nl060849z (međunarodna recenzija, članak, znanstveni)
Li, Y., Xiang, J., Qian, F., Gradečak, S., Wu, Y., Yan, H., Blom, D. & Lieber, C. (2006) Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors. Nano letters, 6 (7), 1468-1473 doi:10.1021/nl060849z.
@article{article, author = {Li, Y. and Xiang, J. and Qian, F. and Grade\v{c}ak, Silvija and Wu, Y. and Yan, H. and Blom, D. A. and Lieber, C. M.}, year = {2006}, pages = {1468-1473}, DOI = {10.1021/nl060849z}, keywords = {radial, nanowire, heterostructures, high electron mobility transistors, GaN/AlN/AlGaN}, journal = {Nano letters}, doi = {10.1021/nl060849z}, volume = {6}, number = {7}, issn = {1530-6984}, title = {Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors}, keyword = {radial, nanowire, heterostructures, high electron mobility transistors, GaN/AlN/AlGaN} }
@article{article, author = {Li, Y. and Xiang, J. and Qian, F. and Grade\v{c}ak, Silvija and Wu, Y. and Yan, H. and Blom, D. A. and Lieber, C. M.}, year = {2006}, pages = {1468-1473}, DOI = {10.1021/nl060849z}, keywords = {radial, nanowire, heterostructures, high electron mobility transistors, GaN/AlN/AlGaN}, journal = {Nano letters}, doi = {10.1021/nl060849z}, volume = {6}, number = {7}, issn = {1530-6984}, title = {Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors}, keyword = {radial, nanowire, heterostructures, high electron mobility transistors, GaN/AlN/AlGaN} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus
  • MEDLINE

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