Pregled bibliografske jedinice broj: 36804
Nitrogen influence on dangling bond configuration in silicon-rich SiOx : N, H thin films
Nitrogen influence on dangling bond configuration in silicon-rich SiOx : N, H thin films // Journal of vacuum science and technology B, 17 (1999), 1; 44-48 (međunarodna recenzija, članak, znanstveni)
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Naslov
Nitrogen influence on dangling bond configuration in silicon-rich SiOx : N, H thin films
Autori
Pivac, Branko ; Rakvin, Boris ; Borghesi, A. ; Sassella, A. ; Bachetta, M. ; Zanotti, L. ;
Izvornik
Journal of vacuum science and technology B (1071-1023) 17
(1999), 1;
44-48
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
thin films; SiOx; electron paramagnetic resonance
Sažetak
Paramagnetic centers were studied in different SiOx:N, H films deposited by plasma enhanced chemical vapor deposition in a wide composition range. It is shown that the presence of nitrogen impurities significantly affects the total dangling bond concentration, as revealed after sample irradiation. In particular, the presence of N-H bonds induces a release of the film stress, which may be related to such concentration. It is also shown that both weak Si-Si bonds and Si-H bonds may serve as precursors for the dangling bond formation.
Izvorni jezik
Engleski
Znanstvena područja
Fizika, Kemija
POVEZANOST RADA
Ustanove:
Institut "Ruđer Bošković", Zagreb
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
