Naslov
Radiation defects in EFG polycrystalline Si for solar cells

Autori
Slunjski, Robert ; Capan, Ivana ; Jakšić, Milko ; Pivac, Branko ;

Vrsta, podvrsta i kategorija rada
Sažeci sa skupova, sažetak, znanstveni

Izvornik
Programme & Book of abstracts of the 12th JVC, 10th EVC, and 7th Annual Meeting of GVS / Bohatka, S. - Deberecen : REXPO Kft., 2008, 120-120

Skup
12th JVC, 10th EVC, 7th Annual Meeting of GVS

Mjesto i datum
Balatonalmádi, Mađarska, 22.09.2008. - 26.09.2008

Vrsta sudjelovanja
Poster

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
polycrystalline silicon ; defects ; dlts ; solar cells

Sažetak
Intrinsic point defect population in polycrystalline silicon is of the particular importance due to its influence on the electronic properties of material. A study of intrinsic point defects behavior is additionally complicated due to the interaction with the present impurities and different structural defects. Experiments were performed on EFG polycrystalline silicon material rich with carbon and different structural defects such as dislocations and various grain boundaries. Samples were irradiated with 1.2 MeV gamma rays from 60Co source to various doses to introduce simple point defects into the bulk of the material. For the comparison samples have also been irradiated with 2-4 MeV protons to various doses. The proton irradiation is known to produce more complex defects than just point-like defects. Although such material typically exhibits great spatial inhomogeneity we have ensured reproducibility of our measurements. The results obtained with deep-level transient spectroscopy showed the great difference in two types of radiation. Comparing the similar effect on CZ single-crystal Si samples the clear effect of carbon is shown and discussed.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

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