Naslov
Revealing the Defects Introduced in N- or Ge-doped Cz-Si by gamma Irradiation and High Temperature-High Pressure Treatment

Autori
Wieteska, K. ; Misiuk, A. ; Wierzchowski, W. ; Bak-Misiuk, J. ; Romanowski, P. ; Surma, B. ; Capan, Ivana ; Yang, D. ; Shalimov, A. ; Graeff, W. ; Prujszczyk, M.

Izvornik
Acta Physica Polonica. A (0587-4246) 114 (2008), 2; 439-446

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
silicon ; germanium ; nitrogen ; defects ; X-ray diffraction

Sažetak
Effect of processing under high hydrostatic pressure (= 1.1 GPa), applied at 1270 K, on Czochralski grown silicon with interstitial oxygen content (cO) up to 1:1x10E18 cm-3, admixed with N or Ge (Si-N, cN <1.2x10E15 cm-3, or Si-Ge, cGe ~ 7x10E17 cm-3, respectively), pre-annealed at up to 1400 K and next irradiated with gamma-rays (dose, D up to 2530 Mrad, at energy E = 1.2 MeV), was investigated by high resolution X-ray diffrac- tion, Fourier transform infrared spectroscopy, and synchrotron topography. Processing of gamma-irradiated Si-N and Si-Ge under high pressure leads to stimulated precipitation of oxygen at the nucleation sites created by irradiation. It means that radiation history of Si-N and Si-Ge can be revealed by appropriate high temperature-high pressure processing.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

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