Naslov
First sub-30nm vertical Silicon-On-Nothing MOSFET

Autori
Hoellt, Lothar ; Schulze, Joerg ; Eisele, Ignaz ; Suligoj, Tomislav ; Jovanović, Vladimir ; Thompson, Phill E.

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the 31st International Convention MIPRO / Biljanović, P. ; Skala, K. - Zagreb : Denona, 2008, 90-95

ISBN
978-953-233-036-6

Skup
31st International Convention MIPRO

Mjesto i datum
Opatija, Hrvatska, 26.05.2008. - 30.05.2008

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
silicon-on-nothing (SON); vertical SONFET; SiGe; sub-30 nm; etching selectivity

Sažetak
The first vertical fully-depleted “ silicon-onnothing” field-effect transistor (SONFET) device with a channel length less than 30nm is introduced. The key idea is the determination of transistor channel length as well as depletion width by means of well defined epitaxial growth. To obtain the transistor channel a sacrificial layer made from silicon germanium (Si1-xGex) and the selective wet-chemical removal of this layer is used. In a first step this sacrificial layer, grown under biaxial compression by means of CVD, is used for physical channel length definition and to introduce uniaxial strain to intrinsic silicon channel grown afterwards by means of CVD. The thickness of this intrinsic layer defines the channel depletion width. In a final step the sacrificial Si1-xGex is selectively removed and the uniaxial strained silicon channel, connecting source and drain remains free standing.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika

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