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Pregled bibliografske jedinice broj: 353217

SOI vs. Bulk FinFET: Body Doping and Corner Effects Influence on Device Characteristics

Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav
SOI vs. Bulk FinFET: Body Doping and Corner Effects Influence on Device Characteristics // Proceedings of the 14th IEEE Mediterranean Electrotechnical Conference (MELECON) / G. A. Capolino, J. F. Santucci (ur.).
Ajaccio: Institute of Electrical and Electronics Engineers (IEEE), 2008. str. 425-430 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)

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Naslov
SOI vs. Bulk FinFET: Body Doping and Corner Effects Influence on Device Characteristics

Autori
Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
Proceedings of the 14th IEEE Mediterranean Electrotechnical Conference (MELECON) / G. A. Capolino, J. F. Santucci - Ajaccio : Institute of Electrical and Electronics Engineers (IEEE), 2008, 425-430

ISBN
978-1-4244-1633-2

Skup
The 14th IEEE Mediterranean Electrotechnical Conference

Mjesto i datum
Ajaccio, Francuska, 05.05.2008. - 07.05.2008

Vrsta sudjelovanja
Predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
body-tied; bulk; double-gate MOSFET; FinFET; short-channel effects (SCE); silicon-on-insulator (SOI)

Sažetak
SOI and bulk FinFET were analyzed by a threedimensional numerical device simulator and their electrical characteristics were compared for different body doping and bias conditions. Subthreshold and on-state performance have been examined and higher drain current in case of SOI FinFET has been explained by investigating enhanced conduction in silicon-oxide interface corners.

Izvorni jezik
Engleski

Znanstvena područja
Elektrotehnika



POVEZANOST RADA

Projekti:
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Suligoj, Tomislav, MZO ) ( CroRIS)
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Koričić, Marko, MZO ) ( CroRIS)

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Tomislav Suligoj (autor)

Avatar Url Vladimir Jovanović (autor)

Avatar Url Mirko Poljak (autor)

Citiraj ovu publikaciju:

Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav
SOI vs. Bulk FinFET: Body Doping and Corner Effects Influence on Device Characteristics // Proceedings of the 14th IEEE Mediterranean Electrotechnical Conference (MELECON) / G. A. Capolino, J. F. Santucci (ur.).
Ajaccio: Institute of Electrical and Electronics Engineers (IEEE), 2008. str. 425-430 (predavanje, međunarodna recenzija, cjeloviti rad (in extenso), znanstveni)
Poljak, M., Jovanović, V. & Suligoj, T. (2008) SOI vs. Bulk FinFET: Body Doping and Corner Effects Influence on Device Characteristics. U: G. A. Capolino, J. (ur.)Proceedings of the 14th IEEE Mediterranean Electrotechnical Conference (MELECON).
@article{article, author = {Poljak, Mirko and Jovanovi\'{c}, Vladimir and Suligoj, Tomislav}, editor = {G. A. Capolino, J.}, year = {2008}, pages = {425-430}, keywords = {body-tied, bulk, double-gate MOSFET, FinFET, short-channel effects (SCE), silicon-on-insulator (SOI)}, isbn = {978-1-4244-1633-2}, title = {SOI vs. Bulk FinFET: Body Doping and Corner Effects Influence on Device Characteristics}, keyword = {body-tied, bulk, double-gate MOSFET, FinFET, short-channel effects (SCE), silicon-on-insulator (SOI)}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, publisherplace = {Ajaccio, Francuska} }
@article{article, author = {Poljak, Mirko and Jovanovi\'{c}, Vladimir and Suligoj, Tomislav}, editor = {G. A. Capolino, J.}, year = {2008}, pages = {425-430}, keywords = {body-tied, bulk, double-gate MOSFET, FinFET, short-channel effects (SCE), silicon-on-insulator (SOI)}, isbn = {978-1-4244-1633-2}, title = {SOI vs. Bulk FinFET: Body Doping and Corner Effects Influence on Device Characteristics}, keyword = {body-tied, bulk, double-gate MOSFET, FinFET, short-channel effects (SCE), silicon-on-insulator (SOI)}, publisher = {Institute of Electrical and Electronics Engineers (IEEE)}, publisherplace = {Ajaccio, Francuska} }

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