Pregled bibliografske jedinice broj: 345505
Temperature changes in the photoluminescence and the intrinsic absorption edge of the (Ga0.1In0.9)(2)Se3 crystals
Temperature changes in the photoluminescence and the intrinsic absorption edge of the (Ga0.1In0.9)(2)Se3 crystals // Optics and Spectroscopy, 100 (2006), 1; 80-84 doi:10.1134/S0030400X06010152 (međunarodna recenzija, članak, znanstveni)
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Naslov
Temperature changes in the photoluminescence and the intrinsic absorption edge of the (Ga0.1In0.9)(2)Se3 crystals
Autori
Kranjčec, Mladen ; Studenyak, I. P.
Izvornik
Optics and Spectroscopy (0030-400X) 100
(2006), 1;
80-84
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
Photoluminescence; absorption edge; temperature changes
Sažetak
The photoluminescence and the intrinsic absorption edge of the (Ga0.1In0.9)2Se3 uniaxial crystals are investigated in the temperature range 77-300 K. Exciton and impurity luminescence bands are revealed at low temperatures and the Urbach tail of the absorption edge is found in the temperature range under study. The temperature dependence of the spectral position and the half-width of the luminescence bands, as well as the optical pseudogap and the energy width of absorption edge, are studied. The mechanisms of radiative recombination and light absorption and the processes of lattice disordering in the (Ga0.1In0.9)2Se3 crystal are discussed.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
