Pregled bibliografske jedinice broj: 345495
Study of Photoluminescence and the Optical Absorption Edge in Semiconducting crystals of g1-(GaxIn1-x)2Se3
Study of Photoluminescence and the Optical Absorption Edge in Semiconducting crystals of g1-(GaxIn1-x)2Se3 // Ukrainskij fizi� j � urnal, 20 (2005), 1260-1264 (podatak o recenziji nije dostupan, članak, znanstveni)
CROSBI ID: 345495 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Study of Photoluminescence and the Optical Absorption Edge in Semiconducting crystals of g1-(GaxIn1-x)2Se3
Autori
Kranjčec, M. ; Studenyak, I.P. ; Azhnyuk, Yu.M. ; Perechynskyi S.I.
Izvornik
Ukrainskij fizi� j � urnal (0372-400X) 20
(2005);
1260-1264
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
Solid solutions; Photoluminescence; Optical absorption edge
Sažetak
Experimental studies of photoluminescence and the optical absorption edge in crystals with x = 0.1 to 0.4 have been carried out. The exciton- and impurity-related bands in the photoluminescence spectra, as well as the experimental shape of the absorption edge, have been revealed at the temperature T = 77 K. The compositional dependence of the spectral position of the photoluminescence band, its halfwidth, the optical pseudogap, and the absorption edge energy width have been investigated. The influence of various types of disordering in a crystal lattice on the processes of optical absorption and photoluminescence in solid solutions has been studied.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
