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Pregled bibliografske jedinice broj: 343391

Characterisation of molecular nitrogen in III-V compound semiconductors by near-edge X-ray absorption fine structure and photoemission spectroscopies

Božanić, Ana; Majlinger, Zlatko; Petravić, Mladen; Gao, Q.; Llewellyn, D.; Crotti, C.; Yang, Y.-W.
Characterisation of molecular nitrogen in III-V compound semiconductors by near-edge X-ray absorption fine structure and photoemission spectroscopies // Journal of vacuum science & technology. B, 26 (2008), 4; 592-596 (međunarodna recenzija, članak, znanstveni)

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Naslov
Characterisation of molecular nitrogen in III-V compound semiconductors by near-edge X-ray absorption fine structure and photoemission spectroscopies

Autori
Božanić, Ana ; Majlinger, Zlatko ; Petravić, Mladen ; Gao, Q. ; Llewellyn, D. ; Crotti, C. ; Yang, Y.-W.

Izvornik
Journal of vacuum science & technology. B (1071-1023) 26 (2008), 4; 592-596

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
NEXAFS; nitrogen defects; core-level photoemission; ion-beam nitridation; thin-films; gan; surfaces; implantation; bombardment; defects; growth

Sažetak
Formation of molecular nitrogen under low-energy nitrogen bombardment of III-V compound semiconductor surfaces has been studied by photoemission spectroscopy around N 1s core- level and near-edge X-ray absorption fine structure (NEXAFS) around N K-edge. Interstitial molecular nitrogen, N2, has been formed in all samples under consideration. The presence of N2 produces a sharp resonance in low-resolution NEXAFS spectra, showing the characteristic vibrational fine structure in high- resolution measurements, and, at the same time, a new peak, shifted towards higher binding energies for several eV, in all N 1s photoemission spectra.

Izvorni jezik
Engleski

Znanstvena područja
Fizika



POVEZANOST RADA

Projekti:
316-0982886-0542 - Istraživanje dušikovih defekata u složenim poluvodičkim spojevima (Petravić, Mladen, MZOS ) ( CroRIS)

Ustanove:
Sveučilište u Rijeci - Odjel za fiziku

Profili:

Avatar Url Ana Božanić (autor)

Avatar Url Zlatko Majlinger (autor)

Avatar Url Mladen Petravić (autor)

Citiraj ovu publikaciju:

Božanić, Ana; Majlinger, Zlatko; Petravić, Mladen; Gao, Q.; Llewellyn, D.; Crotti, C.; Yang, Y.-W.
Characterisation of molecular nitrogen in III-V compound semiconductors by near-edge X-ray absorption fine structure and photoemission spectroscopies // Journal of vacuum science & technology. B, 26 (2008), 4; 592-596 (međunarodna recenzija, članak, znanstveni)
Božanić, A., Majlinger, Z., Petravić, M., Gao, Q., Llewellyn, D., Crotti, C. & Yang, Y. (2008) Characterisation of molecular nitrogen in III-V compound semiconductors by near-edge X-ray absorption fine structure and photoemission spectroscopies. Journal of vacuum science & technology. B, 26 (4), 592-596.
@article{article, author = {Bo\v{z}ani\'{c}, Ana and Majlinger, Zlatko and Petravi\'{c}, Mladen and Gao, Q. and Llewellyn, D. and Crotti, C. and Yang, Y.-W.}, year = {2008}, pages = {592-596}, keywords = {NEXAFS, nitrogen defects, core-level photoemission, ion-beam nitridation, thin-films, gan, surfaces, implantation, bombardment, defects, growth}, journal = {Journal of vacuum science and technology. B}, volume = {26}, number = {4}, issn = {1071-1023}, title = {Characterisation of molecular nitrogen in III-V compound semiconductors by near-edge X-ray absorption fine structure and photoemission spectroscopies}, keyword = {NEXAFS, nitrogen defects, core-level photoemission, ion-beam nitridation, thin-films, gan, surfaces, implantation, bombardment, defects, growth} }
@article{article, author = {Bo\v{z}ani\'{c}, Ana and Majlinger, Zlatko and Petravi\'{c}, Mladen and Gao, Q. and Llewellyn, D. and Crotti, C. and Yang, Y.-W.}, year = {2008}, pages = {592-596}, keywords = {NEXAFS, nitrogen defects, core-level photoemission, ion-beam nitridation, thin-films, gan, surfaces, implantation, bombardment, defects, growth}, journal = {Journal of vacuum science and technology. B}, volume = {26}, number = {4}, issn = {1071-1023}, title = {Characterisation of molecular nitrogen in III-V compound semiconductors by near-edge X-ray absorption fine structure and photoemission spectroscopies}, keyword = {NEXAFS, nitrogen defects, core-level photoemission, ion-beam nitridation, thin-films, gan, surfaces, implantation, bombardment, defects, growth} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus

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