Pregled bibliografske jedinice broj: 338235
Origin of the Q=11meV bound exciton in GaN
Origin of the Q=11meV bound exciton in GaN // Materials Science & Engineering B-Solid State Materials for Advanced Technology, 50 (1997), 1-3; 109-112 doi:10.1016/S0921-5107(97)00146-3 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 338235 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Origin of the Q=11meV bound exciton in GaN
Autori
Kaufmann, U. ; Merz, C. ; Šantić, Branko ; Niebuhr, R. ; Obloh, H. ; Bachem, K.H.
Izvornik
Materials Science & Engineering B-Solid State Materials for Advanced Technology (0921-5107) 50
(1997), 1-3;
109-112
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
Semiconductors; excitons; GaN
Sažetak
The bound exciton line S with a localization energy of Q = 11.5 meV has been studied by power and temperature dependent photoluminescence (PL). High resistivity undoped and Mg doped wurtzite GaN samples grown by MOCVD were analyzed. The experimental data provide strong evidence that line S is due to recombination of excitons bound to ionized shallow donors which is consistent with theoretical expectations. A brief discussion of the coupling strength of different excitons to LO phonons is given.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
