Naslov
Analysis of transient phenomena in GaAs with the metastable model

Autori
Šantić, Branko ; Radić, Nikola ; Desnica, Uroš V. ; Fillard, J.P.

Izvornik
Physica status solidi. B, Basic research (0370-1972) 195 (1996), 2; 465-474

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
semiconductors ; GaAs

Sažetak
Transients of the diode capacitance C-d, optical absorption coefficient alpha, and EPR signal in GaAs are studied within the framework of the metastable model. The spectral behavior of transients is studied theoretically in the 0.9 to 1.3 eV range. It is shown that the occupancy factor F (electron occupancy of EL2 defect) plays an important role in the observation of the characteristic 'fingerprint' signals. It significantly influences both the amplitude and the shape of the transient as well as its spectral behavior. A novel way for the determination of the value of F from the experimental results is proposed. It is discussed why the variation of F among the samples leads to the sample dependence of the results which is frequently experimentally observed. The appearance of 'non- quenchable' and 'EL2-like' defects is also discussed. The experimentally observed results can be modeled even with the assumption of a constant value of sigma* (capture cross section for the metastable transition). The light flux intensity and the time of illumination should be specified for a meaningful comparison of various experimental results.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

POVEZANOST RADA