Pregled bibliografske jedinice broj: 338171
A comparative study of deep levels in undoped semi-insulating gallium arsenide wafers using thermally stimulated current spectra
A comparative study of deep levels in undoped semi-insulating gallium arsenide wafers using thermally stimulated current spectra // Journal of Physics D Applied Physics, 28 (1995), 5; 934-938 doi:10.1088/0022-3727/28/5/015 (međunarodna recenzija, članak, znanstveni)
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Naslov
A comparative study of deep levels in undoped semi-insulating gallium arsenide wafers using thermally stimulated current spectra
Autori
Pavlović, Mladen ; Šantić, Branko ; Desnica, Uroš
Izvornik
Journal of Physics D Applied Physics (0022-3727) 28
(1995), 5;
934-938
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
semiconductors; GaAs; semiinsulating gaas; photoelectronic properties; si-gaas; photoconductivity; spectroscopy; electron; traps; transients; tsc
Sažetak
A comparative study of deep levels in undoped semi-insulating gallium arsenide wafers using thermally stimulated current spectra.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Ustanove:
Institut "Ruđer Bošković", Zagreb
Citiraj ovu publikaciju:
Časopis indeksira:
- Current Contents Connect (CCC)
- Web of Science Core Collection (WoSCC)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
