Pregled bibliografske jedinice broj: 337714
Photoconductivity transients and photosensitization phenomena in semi-insulating GaAs
Photoconductivity transients and photosensitization phenomena in semi-insulating GaAs // Journal of applied physics, 73 (1993), 10; 5181-5184 doi:10.1063/1.353795 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 337714 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Photoconductivity transients and photosensitization phenomena in semi-insulating GaAs
Autori
Šantić, Branko ; Desnica, Uroš ; Radić, Nikola ; Desnica, Dunja ; Pavlović, Mladen
Izvornik
Journal of applied physics (0021-8979) 73
(1993), 10;
5181-5184
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
Semiconductors ; photoconductivity ; GaAs
Sažetak
A model is proposed for the photoconductivity transients and the photosensitization in semi-insulating GaAs induced by low-intensity light at low temperatures. During photoconductivity transients, the lifetime of free carriers is shown to be a time-dependent quantity, determined mainly by the trapping processes, recombination being negligible. Photosensitization and thermal restoration are explained by the filling and emptying of deep traps. Contrary to some other explanations, in this model it is not necessary to utilize the metastability of EL2 or other defects. The model is verified experimentally by an original use of the thermally stimulated current method. It is also possible to determine values of capture cross sections for dominant traps.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Ustanove:
Institut "Ruđer Bošković", Zagreb
Citiraj ovu publikaciju:
Časopis indeksira:
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
