Pregled bibliografske jedinice broj: 337644
Electrical Properties of CuGaxIn1−xTe2 Semiconductors
Electrical Properties of CuGaxIn1−xTe2 Semiconductors // Physica status solidi. A, Applied research, 133 (1992), 1; 137-146 doi:10.1002/pssa.2211330114 (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 337644 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Electrical Properties of CuGaxIn1−xTe2 Semiconductors
Autori
Šantić, Branko
Izvornik
Physica status solidi. A, Applied research (0031-8965) 133
(1992), 1;
137-146
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
electrical properties ; semiconductors
Sažetak
Electrical properties of as-grown crystals CuGaTe2, CuInTe2, and their mixtures CuGaxIn1−xTe2, are studied. Typical room temperature values of the free carrier concentration and the mobility are p = 1018 cm−3 and μH = 30 to 140 cm2/Vs, respectively. The temperature dependence of carrier concentration reveals the presence of two acceptors: One acceptor is very shallow and its concentration is around 1017 cm−3. Main acceptor is 71 meV deep and its concentration is ≈︁ 1019 cm−3. The methods for the calculation of the ionization energy are discussed. Previously published results are reviewed and compared with ours.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Časopis indeksira:
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
