Pregled bibliografske jedinice broj: 337163
Quenching and enhancement of photo-conductivity in semi-insulating GaAs
Quenching and enhancement of photo-conductivity in semi-insulating GaAs // Solid state communications, 74 (1990), 8; 847-850 doi:10.1016/0038-1098(90)90948-B (međunarodna recenzija, članak, znanstveni)
CROSBI ID: 337163 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Quenching and enhancement of photo-conductivity in semi-insulating GaAs
Autori
Šantić, Branko ; Desnica, Dunja ; Petrović, Bojan ; Desnica, Uroš
Izvornik
Solid state communications (0038-1098) 74
(1990), 8;
847-850
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
semiconductors ; III-V ; photoconductivity ; GaAs
Sažetak
The time evolution of low temperature photoconductivity (PC) in Liquid Encapsulated Czochralski Semi-insulating GaAs for below- the gap energy photons is studied. For a certain range of photon flux densities both the quenching and enhancement part of the PC curve can be observed. It is shown that the transformation of EL2 defects into their metastable states cannot be responsible for the quenching part of PC curve. The good correlation of the PC with deep trap occupancy is established during both quenching and enhancement part of PC curve, leading to the conclusion that filling/emptying of deep traps plays the key role in peculiar time evolution of PC.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
POVEZANOST RADA
Ustanove:
Institut "Ruđer Bošković", Zagreb
Profili:
Bojan Petrović
(autor)
Branko Šantić
(autor)
Uroš Desnica
(autor)
Ida-Dunja Desnica
(autor)
Citiraj ovu publikaciju:
Časopis indeksira:
- Web of Science Core Collection (WoSCC)
- Science Citation Index Expanded (SCI-EXP)
- SCI-EXP, SSCI i/ili A&HCI
- Scopus
