Pregled bibliografske jedinice broj: 323413
Hydrogen Passivation of Damage Centers in Semiconductors
Hydrogen Passivation of Damage Centers in Semiconductors // Hydrogen in Semiconductors / Pankove, Jaques I (ur.).
Lahti: Academic Press, 1991. str. 49-64
CROSBI ID: 323413 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Hydrogen Passivation of Damage Centers in Semiconductors
Autori
Corbett, James W. ; Deak, Peter ; Desnica, Uroš V., Pearton, Stephen J.
Vrsta, podvrsta i kategorija rada
Poglavlja u knjigama, znanstveni
Knjiga
Hydrogen in Semiconductors
Urednik/ci
Pankove, Jaques I
Izdavač
Academic Press
Grad
Lahti
Godina
1991
Raspon stranica
49-64
ISBN
0-12-752134-8
Ključne riječi
Semiconductors, Hydrogen, passivation, vacancy
Sažetak
Studies of hydrogen have seen exciting progress in recent years, and have promise of even more understanding of the mechanisms of interaction of hydrogen with defects and in the unraveling defect processes with the hydrogen decoration of defects. The emergence of EPR and IR studies into new prominence is very promissing ; correlated studies with these techniques and with electrical studies should lead to gfreat progress if we have the required funding, persistence and pacience.
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Napomena
Serija Semiconductors and Semimetals (Wilardson, Robert, K. and Beer, Albert C., ur.) izlazi od 1996. Svaki svezak ima zaseban naslov. ISSN: 0080-8784
