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Pregled bibliografske jedinice broj: 322008

SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening

Zhang, Jianjun; Stoffel, Mathieu; Rastelli, Armando; Schmidt, Oliver G.; Jovanović, Vladimir; Nanver, Lis K.; Bauer, Guenther
SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening // Applied Physics Letters, 91 (2007), 17; 173115-1 doi:10.1063/1.2802555 (međunarodna recenzija, članak, znanstveni)

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Naslov
SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening

Autori
Zhang, Jianjun ; Stoffel, Mathieu ; Rastelli, Armando ; Schmidt, Oliver G. ; Jovanović, Vladimir ; Nanver, Lis K. ; Bauer, Guenther

Izvornik
Applied Physics Letters (0003-6951) 91 (2007), 17; 173115-1

Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni

Ključne riječi
SiGe island growth; surface evolution

Sažetak
The morphological evolution of both pits and SiGe islands on patterned Si(001) substrates is investigated. With increasing Si buffer layer thickness the patterned holes transform into multifaceted pits before evolving into inverted truncated pyramids. SiGe island formation and evolution are studied by systematically varying the Ge coverage and pit spacing and quantitative data on the influence of the pattern periodicity on the SiGe island volume are presented. The presence of pits allows the fabrication of uniform island arrays with any of their equilibrium shapes.

Izvorni jezik
Engleski

Znanstvena područja
Fizika

Napomena
Art. no. 173115.



POVEZANOST RADA

Projekti:
036-0361566-1567 - Nanometarski elektronički elementi i sklopovske primjene (Suligoj, Tomislav, MZO ) ( CroRIS)
036-0982904-1642 - Sofisticirane poluvodičke strukture za komunikacijsku tehnologiju (Koričić, Marko, MZO ) ( CroRIS)

Ustanove:
Fakultet elektrotehnike i računarstva, Zagreb

Profili:

Avatar Url Vladimir Jovanović (autor)

Poveznice na cjeloviti tekst rada:

doi scitation.aip.org

Citiraj ovu publikaciju:

Zhang, Jianjun; Stoffel, Mathieu; Rastelli, Armando; Schmidt, Oliver G.; Jovanović, Vladimir; Nanver, Lis K.; Bauer, Guenther
SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening // Applied Physics Letters, 91 (2007), 17; 173115-1 doi:10.1063/1.2802555 (međunarodna recenzija, članak, znanstveni)
Zhang, J., Stoffel, M., Rastelli, A., Schmidt, O., Jovanović, V., Nanver, L. & Bauer, G. (2007) SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening. Applied Physics Letters, 91 (17), 173115-1 doi:10.1063/1.2802555.
@article{article, author = {Zhang, Jianjun and Stoffel, Mathieu and Rastelli, Armando and Schmidt, Oliver G. and Jovanovi\'{c}, Vladimir and Nanver, Lis K. and Bauer, Guenther}, year = {2007}, pages = {173115-1-173115-3}, DOI = {10.1063/1.2802555}, keywords = {SiGe island growth, surface evolution}, journal = {Applied Physics Letters}, doi = {10.1063/1.2802555}, volume = {91}, number = {17}, issn = {0003-6951}, title = {SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening}, keyword = {SiGe island growth, surface evolution} }
@article{article, author = {Zhang, Jianjun and Stoffel, Mathieu and Rastelli, Armando and Schmidt, Oliver G. and Jovanovi\'{c}, Vladimir and Nanver, Lis K. and Bauer, Guenther}, year = {2007}, pages = {173115-1-173115-3}, DOI = {10.1063/1.2802555}, keywords = {SiGe island growth, surface evolution}, journal = {Applied Physics Letters}, doi = {10.1063/1.2802555}, volume = {91}, number = {17}, issn = {0003-6951}, title = {SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening}, keyword = {SiGe island growth, surface evolution} }

Časopis indeksira:


  • Current Contents Connect (CCC)
  • Web of Science Core Collection (WoSCC)
    • Science Citation Index Expanded (SCI-EXP)
    • SCI-EXP, SSCI i/ili A&HCI
  • Scopus

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