Naslov
Defects in SI GaAs

Autori
Desnica, Uroš

Vrsta, podvrsta i kategorija rada
Radovi u zbornicima skupova, cjeloviti rad (in extenso), znanstveni

Izvornik
XI Yugoslav Symposium on the Physics of Condensed Matter : Proceedings / Davidovic, M ; Napijalo, M.Lj. - Zagreb : Fizikalno društvo, 1989, 245-249

Skup
XI Yugoslav Symposium on the Physics of Condensed Matter

Mjesto i datum
Donji Milanovac, Jugoslavija, 03.10.1988. - 07.10.1988

Vrsta sudjelovanja
Pozvano predavanje

Vrsta recenzije
Međunarodna recenzija

Ključne riječi
carbon; deep levels; gallium arsenide; III-V semiconductors.

Sažetak
Defects in semi-insulating gallium arsenide are reviewed, especially those contributing to compensation between donors and acceptors, which are responsible for the very high electrical resistivity of the material. Compensation mechanisms-fine balance between native deep donors, called EL2, shallow acceptors, (C, Zn, Be, etc.) and shallow donors (Si, Te, Se, etc.) are discussed in detail. Special emphasis is put on two subjects: carbon as an impurity in GaAs, which is believed to be the most important shallow impurity, and (b) extrinsic and intrinsic defects (yet unidentified) introducing deep traps in forbidden energy gap of GaAs, which do not only contribute to the donor-acceptor balance but also strongly influence some important opto-electronic properties of SI GaAs (37 References).

Izvorni jezik
Engleski

Znanstvena područja
Fizika

Napomena
Fizika (Zagreb) (0015-3206)

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