Pregled bibliografske jedinice broj: 319630
Defects in semi-insulating gallium arsenide
Defects in semi-insulating gallium arsenide // Fizika, 21 (1989), S1; 245-259 (podatak o recenziji nije dostupan, članak, znanstveni)
CROSBI ID: 319630 Za ispravke kontaktirajte CROSBI podršku putem web obrasca
Naslov
Defects in semi-insulating gallium arsenide
Autori
Desnica, Uroš
Izvornik
Fizika (0015-3206) 21
(1989), S1;
245-259
Vrsta, podvrsta i kategorija rada
Radovi u časopisima, članak, znanstveni
Ključne riječi
semi-insulating sample; defects; semiconductor; extrinsic defects; compensation; donors; acceptors; high electrical resistivity; native deep donors; EL2; shallow acceptors; shallow donors; intrinsic defects; deep traps; forbidden energy gap; donor-acceptor balance; opto-electronic properties; SI GaAs; GaAs:C.
Sažetak
Defects in semi-insulating gallium arsenide are reviewed, especially those contributing to compensation between donors and acceptors, which are responsible for the very high electrical resistivity of the material. Compensation mechanisms-fine balance between native deep donors, called EL2, shallow acceptors, (C, Zn, Be, etc.) and shallow donors (Si, Te, Se, etc.) are discussed in detail. Special emphasis is put on two subjects: carbon as an impurity in GaAs, which is believed to be the most important shallow impurity, and (b) extrinsic and intrinsic defects (yet unidentified) introducing deep traps in forbidden energy gap of GaAs, which do not only contribute to the donor-acceptor balance but also strongly influence some important opto-electronic properties of SI GaAs (37 References).
Izvorni jezik
Engleski
Znanstvena područja
Fizika
Citiraj ovu publikaciju:
Uključenost u ostale bibliografske baze podataka::
- The INSPEC Science Abstracts series
